SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME, ESPECIALLY REDUCING THRESHOLD CURRENT DENSITY OF A SINGLE

摘要

PURPOSE: A semiconductor laser and a method of manufacturing the same are provided to reduce threshold current density of a single wavelength semiconductor laser using a nitride compound semiconductor. CONSTITUTION: A nitride compound semiconductor laser comprises a substrate(1), and the first clad layer(2) being formed on the substrate and containing the first type impurity. The first light waveguide layer(3) is formed on the first clad layer. An active layer(4) is formed on the first light waveguide layer, and is constituted with a single gain layer and contains indium. The second light waveguide layer(5) is formed on the active layer. An electron block layer is formed between the active layer and the second light waveguide layer. And the second clad layer(6) is formed on the electron block layer and contains the second type impurity.