METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE DEFINING DIFFERENT ANTENNA STANDARDS FOR SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to define for a semiconductor device connected to a diode an antenna standard different from a standard defined for a semiconductor device which is not connected to a diode. CONSTITUTION: A plurality of semiconductor devices include gate insulation films which have different thicknesses. The semiconductor devices have different antenna standards. A first antenna standard for a first semiconductor device is set to be more flexible than a second antenna standard for the first semiconductor device. The first semiconductor device includes a gate insulating film whose thickness is smaller than a predetermined thickness. The second semiconductor device includes a gate insulating film whose thickness is greater than a predetermined thickness. The predetermined thickness is determined to allow a tunneling of charges.