| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to reduce an interval of process time and fabricating cost by reducing a photomask process as compared with a conventional cylindrical capacitor formation process, and to integrate a DRAM(dynamic random access memory) for effectively embodying a SOC(silicon on chip) device by eliminating the necessity of a capacitor of a height required for guaranteeing sufficient capacitance. CONSTITUTION: A wordline(20) is formed on a semiconductor substrate(10) having a semiconductor element. The first interlayer dielectric(30), a wet-etch preventing layer(40) and the second interlayer dielectric are sequentially formed on the resultant structure including the wordline. The second interlayer dielectric, the wet-etch preventing layer and the first interlayer dielectric are partially eliminated to form a contact hole. The first conductive layer(90) is formed and patterned on the resultant structure including the contact hole. The second interlayer dielectric is removed without a mask process. The wet-etch preventing layer is eliminated. The second conductive layer(100) is formed on the resultant structure including the entire surface of the patterned first conductive layer. An etch-back process is performed to remove the second conductive layer on the first interlayer dielectric without a mask process so that a lower electrode composed of the first and second conductive layers is formed. A dielectric layer(110) and an upper electrode(120) are formed on the resultant structure including the lower electrode.
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