发明名称 |
Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations |
摘要 |
<p>The disclosure relates to an apparatus for chemical mechanical polishing (CMP) of a wafer, comprising: a rotatable polishing patent (16) with an overlying polishing pad (18) wetted with an abrasive slurry, the platen being rotatably mounted to a chassis; a rotatable polishing head (12) for holding the wafer (14) against the polishing pad, the wafer comprising a semiconductor substrate underlying an oxide layer; and an endpoint detector. The detector comprises a laser interferometer (32) capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window (38) disposed adjacent a hole (30) formed through the platen, the window providing a pathway for the laser beam to impinge on the wafer at least during part of a period of time when the wafer overlies the window. <IMAGE></p> |
申请公布号 |
EP1108501(B1) |
申请公布日期 |
2004.05.12 |
申请号 |
EP20010100501 |
申请日期 |
1996.03.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BIRANG, MANOOCHER;JOHANSSON, NILS;GLEASON, ALLAN;PYATIGORSKY, GRIGORY |
分类号 |
B24B37/013;B24B37/20;B24B47/12;B24B49/02;B24B49/04;B24B49/12;B24B51/00;B24D7/12;B24D13/14;G01B11/06;H01L21/304;(IPC1-7):B24B37/04 |
主分类号 |
B24B37/013 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|