发明名称 |
Voltage variable capacitor |
摘要 |
A structure of a radio frequency (RF) variable capacitor to increase a quality factor while using a CMOS process and a method of manufacturing the same. The structure of the RF variable capacitor having a variable range of capacitance between a first minimum value and a first maximum value includes a first capacitor, which has a variable range of capacitance between a second minimum value greater than the first minimum value and a second maximum value greater than the first maximum value, and a second capacitor, which is connected in series to the first capacitor and has capacitance of a fixed value. <IMAGE>
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申请公布号 |
EP1418626(A1) |
申请公布日期 |
2004.05.12 |
申请号 |
EP20030256954 |
申请日期 |
2003.11.04 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JEON SANG-YOON;SUH CHUN-DEOK |
分类号 |
H01L29/92;H01L27/08;(IPC1-7):H01L29/93 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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