发明名称 Voltage variable capacitor
摘要 A structure of a radio frequency (RF) variable capacitor to increase a quality factor while using a CMOS process and a method of manufacturing the same. The structure of the RF variable capacitor having a variable range of capacitance between a first minimum value and a first maximum value includes a first capacitor, which has a variable range of capacitance between a second minimum value greater than the first minimum value and a second maximum value greater than the first maximum value, and a second capacitor, which is connected in series to the first capacitor and has capacitance of a fixed value. <IMAGE>
申请公布号 EP1418626(A1) 申请公布日期 2004.05.12
申请号 EP20030256954 申请日期 2003.11.04
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JEON SANG-YOON;SUH CHUN-DEOK
分类号 H01L29/92;H01L27/08;(IPC1-7):H01L29/93 主分类号 H01L29/92
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