METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to easily form a capacitor and improve an electrical characteristic of the capacitor by increasing adhesion between an oxide layer of the capacitor and a Ru layer and by improving the quality of the Ru layer. CONSTITUTION: The oxide layer(11) of the capacitor is formed on the semiconductor substrate(10) on which a predetermined process is performed. An adhesion layer is formed on the oxide layer of the capacitor. The first metal layer for a lower electrode is formed on the adhesion layer. A dielectric layer with a high dielectric constant is formed on the first metal layer. A heat treatment is performed on the dielectric layer. The second metal layer(15) for an upper electrode is formed on the dielectric layer. The adhesion layer is made of a TaN layer(12). The first metal layer is made of a Ru layer(13) by an ALD(atomic layer deposition) method.