| 摘要 |
PURPOSE: A method for forming a pattern of a semiconductor device is provided to easily form a fine pattern corresponding to high integration by guaranteeing a sufficient process margin for a height in an etch process while controlling a uniform CD(critical dimension) in a photolithography process. CONSTITUTION: The first layer(11) is formed on a semiconductor substrate(10). The second layer for a hard mask(12A) is formed on the first layer. A photoresist pattern(13) having the first CD is formed on the second layer. The second layer is etched to form the hard mask by using the photoresist pattern as an etch mask. The third layer(14) is selectively formed only the photoresist pattern and the hard mask. A mask pattern(100) has the second CD(C2) smaller than the first CD, composed of the photoresist pattern and the hard mask that are covered with the third layer. The first layer is etched to form a pattern having the second CD by using the mask pattern.
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