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发明名称
Insulated gate field effect transistor
摘要
申请公布号
EP0671769(B1)
申请公布日期
2004.05.12
申请号
EP19950103519
申请日期
1995.03.10
申请人
DENSO CORPORATION
发明人
OKABE, NAOTO;KATO, NAOTO
分类号
H01L29/423;H01L29/739;H01L29/78;H01L27/08;H01L29/06;H01L29/10;(IPC1-7):H01L29/78
主分类号
H01L29/423
代理机构
代理人
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