METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor memory device is provided to make the surface of a capacitor electrode uniform and guarantee a uniform thickness of a dielectric layer by controlling a grain growth and an agglomeration phenomenon on the surface of the electrode. CONSTITUTION: A semiconductor substrate(100) is prepared. A lower electrode(110) is formed on the semiconductor substrate. A dielectric layer is formed on the lower electrode. An upper electrode(130) is formed on the dielectric layer. Hetero-metal atoms having a different property than that of a main metal are melted into a main metal layer.