THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

PURPOSE: A thin film transistor array substrate is provided to obtain a uniform display characteristic by designing the width and length of a channel portion of a drive thin film transistor variably. CONSTITUTION: A semiconductor layer made of a polycrystal silicon is formed on an insulation substrate(110). The semiconductor layer includes a semiconductor member(140) of a switching thin film transistor, a semiconductor member(142) of a drive thin film transistor and a sustain electrode member(146). The semiconductor members(140,142) includes source regions(1403,1423) and drain regions(1405,1425) positioned at both sides thereof and doped with an n type or p type impurity, and switching channel members(1402,1404) and a drive channel member(1422) positioned respectively between the source and drain regions.