METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to easily form a capacitor and improve yield and an electrical characteristic like a leakage current and a breakdown voltage by effectively preventing a Ru layer from being damaged by the removal of photoresist in forming a capacitor of a MIM(metal insulator metal) structure using a metal like the Ru layer as an upper electrode. CONSTITUTION: A lower electrode(12) is formed on a semiconductor substrate(10) on which a predetermined process is performed. A Ta2O5 layer and the Ru layer are sequentially formed on the lower electrode. A barrier layer is formed on the Ru layer. A photoresist pattern is formed on the barrier layer. The barrier layer is etched by using the photoresist pattern as an etch mask. The photoresist pattern is eliminated. The Ru layer and the Ta2O5 layer are sequentially etched to form an upper electrode(14A) and a dielectric layer(13A) by using the etched barrier layer as an etch mask.