| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent a lower electrode and a bitline from being short-circuited by forming a negative pattern of the capacitor and by basically preventing a stopper layer from being penetrated by a wet etch method. CONSTITUTION: A bitline(120) is formed on a predetermined base layer(100). The first oxide layer(140a), the stopper layer(160a) and the second oxide layer are sequentially formed on the base layer having the bitline. The second oxide layer, the stopper layer and the first oxide layer are selectively removed to form a plug contact hole(200) between the bitlines. The plug contact hole is buried by a conductive material to form a plug(220). The third oxide layer is formed on the plug and the second oxide. The third oxide layer and the second oxide layer are selectively eliminated to form at least one hole on each of both side surfaces of the plug. The hole is filled with an insulation material to form an insulator pillar(280). The third and the second oxide layers are eliminated. The lower electrode(300) of the capacitor is formed in a region closed by the insulator pillar so as to contact the plug.
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