| 摘要 |
PURPOSE: A method for forming a copper anti-diffusion layer is provided to prevent a copper silicide layer from being formed between a copper interconnection and an anti-diffusion layer by forming an anti-diffusion layer made of a CoW thin film on the copper interconnection. CONSTITUTION: A lower structure includes a lower interconnection whose uppermost layer is made of a copper metal layer(104). An upper structure includes an upper interconnection made of a metal layer. A copper anti-diffusion layer(106) made of a CoW thin film is formed on the lower interconnection by selectively using a cobalt source precursor, a tungsten source precursor and hydrogen reduction gas.
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