METHOD FOR DEHYDROGENATING AMORPHOUS SILICON LAYER AND METHOD FOR FABRICATING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for fabricating a TFT(thin film transistor) is provided to obtain high heating efficiency within a short interval of time at a low temperature by performing an activation process by a direct heating method while using microwave. CONSTITUTION: A polysilicon layer is formed in a predetermined portion on a substrate. A gate insulation layer(13) is formed on the polysilicon layer. A gate electrode(14) is formed on the gate insulation layer. Impurities are implanted into a desired portion of the polysilicon layer. The implanted impurities are activated by a microwave heating method.