发明名称 FIELD ELECTRON EMITTER AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A field electron emitter and a method for manufacturing the same are provided to achieve improved uniformity of electron emission and lower driving voltages, while reducing a leakage current between a cathode and a gate. CONSTITUTION: A field electron emitter comprises a front substrate and a rear substrate(11) opposed each other with a gap formed therebetween; cathodes(12) formed into a stripe on the rear substrate; a plurality of micro tips(12') arranged on the cathodes and electrically connected to the cathodes; first, second, and third insulating layers(13a,13b,13c) formed on the cathodes and the exposed portion of the rear substrate in such a manner that the insulating layers have through holes for accommodating the micro tips; gates(14) formed on the insulating layers in the direction crossing the cathodes in such a manner that the gates have apertures(14') corresponding to the through holes of the insulating layers; anodes(17) formed into a stripe on the front substrate; and phosphor layers(16) formed on the anodes. The second insulating layer made from Al2O3 is interposed between the first and third insulating layers which are made from SiO2.
申请公布号 KR100421207(B1) 申请公布日期 2004.05.12
申请号 KR19960005929 申请日期 1996.03.07
申请人 SAMSUNG SDI CO., LTD. 发明人 PARK, NAM SIN
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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