| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to protect a tungsten plug in a subsequent cleaning process by depositing titanium on a tungsten plug exposed by a mask misalignment by a CVD(chemical vapor deposition) method and by making the exposed tungsten plug covered with the titanium. CONSTITUTION: A contact layer(120), a conductive layer, a contact layer and an ARC(anti-reflective coating)(125) are sequentially stacked on a silicon substrate(100) having the tungsten plug to form a metal interconnection pattern(150). The metal interconnection pattern is dry-etched to form a metal interconnection by using the photoresist layer pattern misaligned on the metal interconnection pattern as an etch mask. Titanium for forming a spacer is deposited on the resultant structure by a CVD method. A spacer etch process is performed to form a spacer(185) on the sidewall of the metal interconnection.
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