| 摘要 |
Provided are an MRAM and methods for manufacturing and driving the same. The MRAM includes a bit line coupled to an emitter of a bipolar junction transistor (BJT), a magnetic tunneling junction (MTJ) layer coupled to the BJT, a word line coupled to the MTJ layer, a plate line coupled to the BJT so as to be spaced apart from the MTJ layer, and an interlayer dielectric formed between the components. The MTJ layer is coupled to a base and a collector of the BJT, the plate line is coupled to the collector, and an amplifying unit for amplifying a data signal during a read operation of data stored in the MTJ layer is coupled to the bit line. Because the bit line is formed of a metal and the BJT is used, a series resistance effect caused by the resistance of a MOS transistor and the parasitic resistances of other elements can be minimized, thus allowing data to be precisely read out from the MTJ layer. Also, compared to an MRAM with a MOS transistor, the MRAM with the BJT leads to improved integration density and can use an MTJ layer having a low MR ratio.
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