Silicon carbide Schottky diode and method for manufacturing the same

摘要

A Schottky diode (10) includes a semiconductor substrate (11) made of 4H-SiC, an epitaxially grown 4H-SiC layer (12), an ion implantation layer (13), a Schottky electrode (14), an ohmic electrode (15), and an insulative layer (16) made of a thermal oxide film. The Schottky electrode (14) and the insulative layer (16) are not in contact with each other, with a gap (17) being provided therebetween, whereby an altered layer does not occur. Therefore, it is possible to suppress the occurrence of a leak current.