| 发明名称 |
Semiconductor memory device having capacitor protection layer and method for manufacturing the same |
| 摘要 |
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| 申请公布号 |
GB2358287(B) |
申请公布日期 |
2004.05.12 |
| 申请号 |
GB20000022092 |
申请日期 |
2000.09.08 |
| 申请人 |
* SAMSUNG ELECTRONICS COMPANY LIMITED |
发明人 |
YONG-TAK * LEE;HAG-JU * CHO;YEONG-KWAN * KIM |
| 分类号 |
H01L21/8247;H01L21/02;H01L21/316;H01L21/318;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/824;H01L23/28 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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