| 发明名称 |
In-situ cap and method of fabricating same for an integrated circuit device |
| 摘要 |
An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.
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| 申请公布号 |
US6734550(B2) |
申请公布日期 |
2004.05.11 |
| 申请号 |
US20020270872 |
申请日期 |
2002.10.15 |
| 申请人 |
ANALOG DEVICES, INC. |
发明人 |
MARTIN JOHN R.;MORRISON, JR. RICHARD H. |
| 分类号 |
B81C1/00;B81B3/00;B81B7/00;H01H57/00;H01H59/00;H01L21/3205;H01L21/768;H01L23/02;H01L23/52;H01L23/522;(IPC1-7):H01L23/12;H01L21/76 |
主分类号 |
B81C1/00 |
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代理人 |
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