Techniques for improving wordline fabrication of a memory device

摘要

Fabrication techniques for making a semiconductor device. More specifically, techniques for fabricating a wordline in a memory device are provided. Specific heat treatments may be added to the process flow to remove or weaken certain layers formed in the wordlines. For instance, an SiNx layer and a crystallized W2N layer may form during the fabrication of the wordline. While the layers may provide certain advantages at certain points in the fabrication process, they may be undesirable at subsequent points. One or more anneal processes may be implemented at various points in the processing to eliminate the crystallized W2N layer and weaken the SiNx layer.