| 摘要 |
A system and method are provided for laser irradiating a semiconductor substrate using a multi-pattern mask. The method comprises: exposing a semiconductor substrate to laser light projected through a multi-pattern mask; advancing the mask and substrate in a first direction to sequentially expose adjacent areas of the substrate to each of the mask patterns in a first predetermined order; and, advancing the mask and substrate in a second direction, opposite the first direction, to sequentially expose adjacent areas of the substrate to each of the mask patterns in the first order. In one aspect, the method further comprises: forming a multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction and a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction. Alternately, the method comprises: forming a first multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction; and, forming a second multi-pattern mask having a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction. Then, advancing the mask and substrate in the first direction includes using the first mask, and advancing the mask and substrate in the second direction, opposite the first direction, includes using the second mask.
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