Method for generating a swing curve and photoresist feature formed using swing curve

摘要

A method for generating a swing curve and a photoresist feature formed using the swing curve. A layer of photoresist is formed that has varying thickness. The thickness of the layer of photoresist is determined at a plurality of points. The semiconductor wafer is then exposed and developed to form a photoresist structure that includes features. For each of the points at which thickness was determined, the size of a corresponding feature is determined. A curve is then determined that correlates the thickness measurements and the size measurements. The resulting swing curve is then used to determine a thickness for photoresist deposition and a photoresist layer is deposited, exposed, and developed to obtain a photoresist feature having the desired size.