| 摘要 |
A method and apparatus to remove contamination and control electrostatic discharge in-situ in a semiconductor device manufacture process. In an embodiment, the method includes providing a reticle having first and second planar surfaces into a chamber. A circuit pattern of opaque material may be disposed on the first planar surface of the reticle. The method further includes irradiating the reticle using an ultraviolet light radiation beam to remove contamination disposed on the first and second planar surfaces of the reticle and to neutralize static electricity accumulated by the reticle.
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