发明名称 |
Protective coating composition for dual damascene process |
摘要 |
The invention discloses a protective coating solution suitable for forming a resinous protective coating layer on a patterned resist layer in the manufacture of semiconductor devices having, in particular, crowdedly hole-patterned areas and areas of an isolated hole pattern. The essential ingredients of the solution are (A) a resinous compound such as an acrylic resin and (B) a crosslinking compound such as a triazine compound which are combined in such a proportion of 2:8 to 4:6 by weight that the overall weight-average molecular weight of the components (A) and (B) is in the range from 1300 to 4500. This inventive coating solution is advantageous in respect of evenness in the thickness of the coating layer even on a patterned resist layer having a crowdedly hole-patterned area and an isolatedly hole-patterned area and absence of unfilled voids within the hole patterns.
|
申请公布号 |
US6734258(B2) |
申请公布日期 |
2004.05.11 |
申请号 |
US20010011277 |
申请日期 |
2001.12.11 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
IGUCHI ETSUKO;KOSHIYAMA JUN;WAKIYA KAZUMASA |
分类号 |
H01L23/522;C08L81/06;H01L21/312;H01L21/768;(IPC1-7):C08F8/30 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|