| 摘要 |
A ferroelectric memory circuit includes a ferroelectric memory cell in the form of a ferroelectric polymer thin film and first and second electrodes respectively, contacting the ferroelectric memory cell at opposite surfaces thereof, whereby a polarization state of the cell can be set, switched or detected by applying appropriate voltages to the electrodes. At least one of the electrodes includes at least one contact layer. The at least one contact layer including a conducting polymer contacting the memory cell, and optionally a second layer of a metal film contacting the conducting polymer, whereby the at least one of the electrodes either includes a conducting polymer contact layer only, or a combination of a conducting polymer contact layer and a metal film layer. A method in the fabrication of a ferroelectric memory circuit of this kind includes steps for depositing a first contact layer of conducting polymer thin film on the substrate, depositing subsequently a ferroelectric polymer thin film on the first contact layer, and then depositing a second contact layer on the top of the ferroelectric polymer thin film.
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