| 摘要 |
A method of forming a resistor is described which achieves improved resistor stability and voltage coefficient of resistance. A resistor is formed from a conducting material such as doped silicon or polysilicon. The resistor has a rectangular first, second, third, fourth, and fifth resistor elements. A layer of protective dielectric is formed over the first, second, and third resistor elements leaving the fourth and fifth resistor elements exposed. The conducting material in the exposed fourth and fifth resistor elements is then changed to a silicide to form low resistance contacts between the second and fourth resistor elements and between the second and fourth resistor elements. The second and third resistor elements are wider than the first resistor element and provide a low resistance contacts to the first resistor element. This provides a low voltage coefficient of resistance and thermal process stability for the resistor.
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