发明名称 |
Apparatus for inspecting defects of devices and method of inspecting defects |
摘要 |
Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).
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申请公布号 |
US6734687(B1) |
申请公布日期 |
2004.05.11 |
申请号 |
US20010936941 |
申请日期 |
2001.12.04 |
申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS, CO., LTD. |
发明人 |
ISHITANI TOHRU;KOIKE HIDEMI;SUGIMOTO ARITOSHI;SEKIHARA ISAMU;UMEMURA KAORU;TOMIMATSU SATOSHI;AZUMA JUNZO |
分类号 |
G01R31/265;G01R31/28;G01R31/302;G01R31/303;G01R31/305;G01R31/307;G01R31/311;H01J37/20;H01J37/28;(IPC1-7):G01R31/302;G01R31/02 |
主分类号 |
G01R31/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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