发明名称 Integrated circuit device structure including foamed polymeric material
摘要 A method of forming an insulating material for use in an integrated circuit includes providing a substrate of the integrated circuit and forming a polymeric material on the substrate. At least a portion of the polymeric material is converted to a foamed polymeric material. The converting of the polymeric material includes exposing at least a portion of the polymeric material to a supercritical fluid. Further, an integrated circuit includes a substrate of the integrated circuit and a foamed polymeric material on at least a portion of the substrate. The integrated circuit may further include a conductive layer adjacent the foamed polymeric material. The conductive layer may be a metal line on the foamed polymeric material, or the conductive layer may be an interconnect, e.g., a contact or a via, adjacent the foamed polymeric material.
申请公布号 US6734562(B1) 申请公布日期 2004.05.11
申请号 US20000480290 申请日期 2000.01.10
申请人 MICRON TECHNOLOGY, INC. 发明人 FARRAR PAUL A.
分类号 H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L23/48 主分类号 H01L21/312
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