发明名称 Hetero-junction laser diode
摘要 A laser diode comprises a first cladding layer having a first conductivity, a second cladding layer having a second conductivity, an active layer located between the first cladding layer and the second cladding layer and extending from one end surface to the other end surface, a first electrode configured to inject a carrier with a first polarity into the active layer via the first cladding layer, and a second electrode configured to inject a carrier with a second polarity into the active layer via the second cladding layer. The active layer comprises a first active region and a second active region, which are arranged alternately and periodically from one end surface to the other end surface in the direction of light propagation, and the first active region and the second active region define type-II hetero junction between them.
申请公布号 US6734464(B2) 申请公布日期 2004.05.11
申请号 US20020280800 申请日期 2002.10.28
申请人 FUJITSU LIMITED 发明人 SEKINE NORIHIKO
分类号 H01S5/12;H01S5/32;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01L33/00 主分类号 H01S5/12
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