| 发明名称 |
Method for thin film resistor integration in dual damascene structure |
| 摘要 |
A thin film resistor (55) is formed over an etch stop layer 40. Contact pads (65) are formed n the thin film resistor (55) and a dielectric layer (80) is formed over the thin film resistor (55). Metal structures (120 are formed above the thin film resistor (55) and metal (110) is used to fill a trench and via formed in the dielectric layer (80).
|
| 申请公布号 |
US6734076(B1) |
申请公布日期 |
2004.05.11 |
| 申请号 |
US20030390054 |
申请日期 |
2003.03.17 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JAISWAL RAJNEESH;BEACH ERIC W. |
| 分类号 |
H01L21/02;H01L21/768;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
