发明名称 |
Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiation |
摘要 |
An ultraviolet sensitive material may be formed within a semiconductor structure covered with a suitable hard mask. At an appropriate time, the underlying ultraviolet sensitive material may be exposed to ultraviolet radiation, causing the material to exhaust through the overlying hard mask. As a result, an air gap may be created having desirable characteristics as a dielectric.
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申请公布号 |
US6734094(B2) |
申请公布日期 |
2004.05.11 |
申请号 |
US20020134264 |
申请日期 |
2002.04.29 |
申请人 |
INTEL CORPORATION |
发明人 |
KLOSTER GRANT M.;LEU JIHPERNG;PARK HYUN-MOG |
分类号 |
H01L21/764;H01L21/768;(IPC1-7):H01L21/764 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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