METHOD FOR FORMING CONTACT AND VIA HOLE PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact and a via hole plug of a semiconductor device is provided to prevent a void from being generated in a contact or a via hole by uniformly growing a metal material on the sidewall and bottom of the contact or the via hole in gap-filling the metal material for forming a plug. CONSTITUTION: An oxide layer(204) is thinly deposited on the sidewall and bottom of the via hole. The oxide layer is etched to be a round type at the edge of the via hole. A barrier metal layer(206) is deposited on the oxide layer deposited on the sidewall and bottom of the via hole. The metal material(208) is gap-filled in the via hole covered with the barrier metal layer so as to form the plug.