PLASMA TREATMENT APPARATUS AND METHOD

摘要

PURPOSE: A plasma treatment apparatus and method are provided to minimize the time for the impedance matching between an RF(Radio Frequency) generator and a plasma chamber. CONSTITUTION: A plasma treatment apparatus is provided with an RF generator(300) for generating RF power and a plasma chamber(100) for processing a semiconductor substrate using the RF power. The plasma treatment apparatus further includes a matching network(200) for carrying out a matching process between the first impedance of the RF generator and the second impedance of the plasma chamber, and a controller(400) connected to the RF generator for controlling the magnitude of the RF frequency supplied from the RF generator. The matching network includes predetermined circuitry made of devices having a fixed size under the matching process. The RF frequency of the RF generator is set before the matching process and modified according to process steps.