发明名称 An apparatus for reducing supplu voltage drops which occur during refreshes to a first memory bank and a second memory bank
摘要 <p>An improved method of accessing dynamic random access memory (DRAM) banks during refresh cycles contemplates sequentially accessing DRAM banks which do not share common filtering capacitors. In this manner, voltage drops caused by refresh accesses are not observed in consecutive clock cycles at the same filtering capacitors so that the filtering capacitors will have sufficient recovery time to restore the supply voltage to the original voltage level before another refresh hit occurs at the same capacitor. In this manner, significant voltage drops are alleviated at the voltage supply inputs to the DRAM banks.</p>
申请公布号 IN192635(B) 申请公布日期 2004.05.08
申请号 IN1173MA1996 申请日期 1996.07.03
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 MOTE, L., RANDALL, JR.
分类号 G11C11/403;G11C5/00;G11C11/406;G11C11/407;G11C11/408;(IPC1-7):G11C7/00 主分类号 G11C11/403
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