METHOD OF DEPOSITING STACK-TYPE HIGH-DIELECTRIC CONSTANT GATE DIELECTRIC WITHOUT LOW-DIELECTRIC CONSTANT LAYER FOR CMOS APPLICATION

摘要

PURPOSE: A method of depositing stack-type high-dielectric constant gate dielectric for CMOS(Complementary Metal Oxide Semiconductor) application is provided to reduce leakage current by depositing directly a high dielectric constant material layer on an H-terminated silicon substrate. CONSTITUTION: An H-terminated surface is formed on a silicon substrate(10). A first metal oxide layer(18) is directly formed on the silicon substrate without a low-dielectric constant layer by performing a first ALD(Atomic Layer Deposition) using a metal nitride precursor. Another metal oxide layer(20) is formed on the first metal oxide layer by performing a second ALD using a metal chloride precursor. An IC(Integrated Circuit) is completed on the resultant structure.