| 摘要 |
PURPOSE: A method for fabricating an SOI(silicon-on-insulator) semiconductor device is provided to eliminate a kink phenomenon caused by ionization by collisons. CONSTITUTION: An insulation layer(4) and an upper silicon substrate are sequentially formed on the lower silicon substrate(2). Ions for reducing resistance are implanted from the upper portion of the upper silicon substrate to the lower silicon substrate through the insulation layer. A masking etch process is performed on the upper silicon layer(6) and the insulation layer to form a contact hole. After an amorphous silicon layer is filled in the contact hole, a planarization process is performed to form the body contact. An epitaxial layer(16) is formed on the resultant structure, and a field oxide layer is formed on the upper silicon substrate. Channel ions are implanted to form an ion implantation region in the upper silicon substrate. After a gate poly layer(24) is formed on the resultant structure, an LDD(lightly doped drain) region(26), a source region(30) and a drain region(32) are formed in the upper silicon substrate. A spacer layer(28) is formed on the side portion of the gate poly layer. An insulation layer is formed on the resultant structure. A body contact hole is formed in which even the lower silicon substrate is etched. A conductive material is filled in the body contact hole and a planarization process is performed to form a power supply contact.
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