SEMICONDUCTOR STRUCTURE OF MEMORY DEVICE, COMPOSED OF SUBSTRATE OF FIRST CONDUCTIVITY TYPE, FIRST DOPANT REGION OF SECOND CONDUCTIVITY TYPE, SECOND DOPANT REGION, GATE DIELECTRIC, FIRST GATE CONDUCTOR, AND FIELD-EFFECT TRANSISTOR, AND PROGRAMMING METHOD FOR NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A semiconductor structure of a memory device and a programming method for a non-volatile memory device are provided to improve high voltage endurance of a drain or a source of a transistor. CONSTITUTION: A semiconductor structure includes a substrate(102) of a first conductivity type, a first dopant region of a second conductivity type included in the substrate, a second dopant region, a gate dielectric(110B) formed on the second dopant region, a first gate conductor(112B) formed on the gate dielectric, and a field-effect transistor having a second gate conductor coupled to the first gate conductor. The second dopant region of the first conductivity type is formed in the first dopant region and is more heavily doped than the first dopant region. The second dopant region, the gate dielectric, and the gate conductor form one capacitor.