| 摘要 |
PURPOSE: A fabrication method of a polycrystal TFT using an electrode is provided to design a surface of an electrode directly contacted with an amorphous preceding film in projection shape instead of a flat type, in order to supply a uniform contact area between the electrode and the amorphous preceding film, thereby applying a uniform electric field. CONSTITUTION: A silicon insulating material is deposited on a substrate(300), and a buffer layer(302) is formed. After depositing an amorphous silicon on the buffer layer(302), an amorphous preceding film(304) is defined through a dehydrogenation process. On one side and other side of the amorphous preceding film(304) where a catalyst metal is deposited, an electrode is disposed. Sides of the electrode contacted with the amorphous preceding film(304) can be configured as plural projections. The electrode can be divided in plural, so as to independently apply electric fields. A high voltage is applied to the electrode while maintaining a certain temperature, and crystallization is carried out. |
