| 摘要 |
PURPOSE: A method for forming a quantum point using a metal thin film is provided to reduce the size of the quantum point to a nano size, uniformly form quantum points, and exactly control the size and density of the quantum point. CONSTITUTION: A metal thin film(2) is deposited on the entire surface of a substrate(1). An insulating precursor(3) is coated on the entire surface of the metal thin film. A heat treatment is carried out on the resultant structure in a predetermined furnace at the highest temperature of 200-500 deg.C. Preferably, the metal thin film is made of one selected from a group consisting of copper, zinc, stannum, Fe, Cd, Pb, Mg, barium, molybdenum, indium, nickel, tungsten, bismuth, Ag, manganese, and their alloy. Preferably, an acid insulating precursor is used as the insulating precursor.
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