| 摘要 |
PURPOSE: A semiconductor device and a method of manufacturing the same are provided to restrain a depletion region and improve the performance of a transistor by using metal electrodes and to prevent leakage current by using sidewalls. CONSTITUTION: A semiconductor device includes a semiconductor substrate, a source sidewall insulator, a drain sidewall insulator, a gate insulating layer(19), a gate conductor, a source conductor, and a drain conductor. The semiconductor substrate(1) includes an active region and an isolation region. The isolation region is composed of a first insulator(52,53) and a second insulator(51). The source sidewall insulator includes a first sidewall(7) and a second sidewall(8). The drain sidewall insulator includes a third sidewall(10) and a fourth sidewall(9). The gate conductor(20) is surrounded by the insulating layer between the second and fourth sidewalls. The source conductor(21) is formed between the first and second sidewalls. The drain conductor(22) is formed between the third and fourth sidewalls.
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