SEMICONDUCTOR DEVICE WITH HEAT SINK STRUCTURE USING SOI SUBSTRATE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device with a heat sink structure using an SOI(silicon-on-insulator) substrate is provided to eliminate the necessity of an additional fan or heat sink by exhausting the heat generated from a semiconductor device to the outside more rapidly. CONSTITUTION: The SOI substrate(20) is a stack structure composed of a lower silicon substrate(21), a buried insulation layer(22) and an upper silicon layer(23). An integrated circuit(IC) is embodied in the upper silicon layer of the SOI substrate. A tunnel region is formed between the lower silicon substrate and the upper silicon layer under the integrated circuit.