| 摘要 |
PURPOSE: A mask for fine patterns of a semiconductor device is provided to be capable of enhancing DOF(Depth of Field) margin in exposing of a storage node. CONSTITUTION: A mask includes a transparent insulating substrate, a plurality of main patterns(23), and at least one subsidiary hole pattern(25). The main patterns are arranged on the transparent insulating substrate spaced apart from each other. The subsidiary hole pattern is arranged at edge portions of the main patterns. The distance length between the main pattern and the subsidiary pattern is λ/2-λ.
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