| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of enhancing charge efficiency of a photodiode. CONSTITUTION: A trench is formed in a semiconductor substrate(41). A trench ion implanted layer(51) is formed on the trench by implanting dopants into the trench. Then, an isolation layer(53) is formed in the trench. A gate oxide layer(57) and a gate(59) are sequentially formed on the substrate. An N-type junction region(63) is formed in the substrate to align one side of the gate. A source/drain junction region(71) is formed in the substrate to align the other side of the gate. A P-type junction region(75) is then formed in the N-type junction region.
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