METHOD FOR MANUFACTURING POLYSILICON THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a polysilicon thin film transistor is provided to improve the roughness of a polysilicon layer using an RTA(Rapid Thermal Annealing) process and preventing the breaking of a gate line. CONSTITUTION: A buffer layer(305) is formed on a transparent insulation substrate(300). An amorphous silicon layer is formed on the entire surface of the buffer layer. The amorphous silicon layer is transformed into a crystallized polysilicon layer by carrying out an SLS(Sequential Lateral Solidification) crystallization using laser beam. An active layer is formed by selectively patterning the crystallized polysilicon layer. The roughness of the active layer is improved by carrying out an RTA process on the resultant structure under H2 gas atmosphere. A gate oxide layer(320) is formed on the resultant structure by carrying out an RTO(Rapid Thermal Oxidation). A metal layer is deposited on the resultant structure.