发明名称 |
Trench structure having one or more diodes embedded therein adjacent a PN junction and method of forming the same |
摘要 |
In accordance with an embodiment of the invention, a semiconductor structure includes a semiconductor region having a P-type region and a N-type region forming a PN junction therebetween. A first trench extends in the semiconductor region adjacent at least one of the P-type and N-type regions. The first trench includes at least one diode therein.
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申请公布号 |
US2004084721(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20020288982 |
申请日期 |
2002.11.05 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
KOCON CHRISTOPHER BOGUSLAW;YEDINAK JOSEPH ANDREW |
分类号 |
H01L29/06;H01L29/40;H01L29/78;H01L29/861;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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