Manufacturing method of semiconductor device

摘要

Manufacture of semiconductor device, comprises forming a second wiring (8) connected to the exposed portion of the first wiring and extending over the surface of the second supporting substrate; forming a protection film (9) comprising an organic resin on a surface of the second wiring by spray coating; and forming an opening in the protection film at a predetermined position to expose the second wiring. Manufacture of a semiconductor device, comprises: (a) bonding a first supporting substrate (4) to a top surface of a semiconductor, a first wiring (3) being formed on the top surface; (b) bonding a second supporting substrate (6) to a back surface of the semiconductor wafer; (c) forming a groove to expose a portion of the first wiring by cutting the second supporting substrate, the second supporting wafer and the first supporting substrate from the surface of the second supporting substrate, the groove reaching inside the first supporting substrate; (d) forming a second wiring connected to the exposed portion of the first wiring and extending over the surface of the second supporting substrate; (e) forming a protection film comprising an organic resin on a surface of the second wiring by spray coating; and (f) forming an opening in the protection film at a predetermined position to expose the second wiring.