发明名称 |
Method of forming relaxed SiGe layer |
摘要 |
A method of forming a SiGe layer having a relatively high Ge content includes preparing a silicon substrate; depositing a layer of strained SiGe to a thickness of between about 100 nm to 500 nm, wherein the Ge content of the SiGe layer is equal to or greater than 20%, by molecular weight; implanting H2<+> ions into the SiGe layer; irradiating the substrate and SiGe layer, to relax the SiGe layer; and depositing a layer of tensile-strained silicon on the relaxed SiGe layer to a thickness of between about 5 nm to 30 nm.
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申请公布号 |
US2004087119(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030625015 |
申请日期 |
2003.07.22 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;LEE JONG-JAN;TWEET DOUGLAS J.;HSU SHENG TENG |
分类号 |
H01L21/205;H01L21/20;H01L21/265;H01L21/322;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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