发明名称 |
MULTIPLE GATE TRANSISTOR EMPLOYING MONOCRYSTALLINE SILICON WALLS |
摘要 |
A semiconductor fabrication process and structure in which a dielectric structure (106) is formed upon a substrate (102). Silicon is then deposited and processed to form a crystalline silicon wall (118) that envelopes the dielectric structure (106) and is physically and electrically isolated from the substrate (102). A gate dielectric film (130) is formed over at least two surfaces of the silicon wall (118) and a gate electrode film (132) is formed over the gate dielectric (130). The gate electrode film (132) is then patterned followed by conventional source/drain implant processing. Portions of the silicon wall (118) disposed on either side of the gate electrode (140) may then be contacted to form source/drain structures (150). In this manner, the portion of the silicon wall (118) covered by the gate electrode (140) comprises a transistor channel region having multiple surfaces controlled by gate electrode (140).
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申请公布号 |
US2004084674(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20020285059 |
申请日期 |
2002.10.31 |
申请人 |
MATHEW LEO;NGUYEN BICH-YEN;PHAM DANIEL THANH-KHAC;VANDOOREN ANNE |
发明人 |
MATHEW LEO;NGUYEN BICH-YEN;PHAM DANIEL THANH-KHAC;VANDOOREN ANNE |
分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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