发明名称 Manufacturing method of photomask and photomask
摘要 In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.
申请公布号 US2004086789(A1) 申请公布日期 2004.05.06
申请号 US20030686723 申请日期 2003.10.17
申请人 HASEGAWA NORIO;TANAKA TOSHIHIKO;OKADA JOJI;MORI KAZUTAKA;MIYAZAKI KO 发明人 HASEGAWA NORIO;TANAKA TOSHIHIKO;OKADA JOJI;MORI KAZUTAKA;MIYAZAKI KO
分类号 G03F1/08;G03F1/00;G03F1/10;G03F1/14;G03F1/32;G03F1/38;G03F1/40;G03F1/54;G03F1/56;G03F1/62;G03F1/68;G03F1/80;G03F7/00;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F1/08
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